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| VCE IC = = 3300 V 800 A ABB HiPakTM IGBT Module 5SNE 0800E330100 PRELIMINARY Doc. No. 5SYA1562-01 July 07 * Low-loss, rugged SPT chip-set * Smooth switching SPT chip-set for good EMC * Industry standard package * High power density * AlSiC base-plate for high power cycling capability * AlN substrate for low thermal resistance Maximum rated values Parameter Collector-emitter voltage DC collector current Peak collector current Gate-emitter voltage Total power dissipation DC forward current Peak forward current Surge current IGBT short circuit SOA Isolation voltage Junction temperature Junction operating temperature Case temperature Storage temperature Mounting torques 1) 2) 2) 1) Symbol VCES IC ICM VGES Ptot IF IFRM IFSM tpsc Visol Tvj Tvj(op) Tc Tstg Ms Mt1 Mt2 Conditions VGE = 0 V, Tvj 25 C Tc = 80 C tp = 1 ms, Tc = 80 C min max 3300 800 1600 Unit V A A V W A A A s V C C C C Nm -20 Tc = 25 C, per switch (IGBT) Either diode VR = 0 V, Tvj = 125 C, tp = 10 ms, half-sinewave, either diode VCC = 2500 V, VCEM CHIP 3300 V VGE 15 V, Tvj 125 C t = 1 min, f = 50 Hz -40 -40 -40 Base-heatsink, M6 screws Main terminals, M8 screws Auxiliary terminals, M4 screws 4 8 2 20 7700 800 1600 8000 10 6000 150 125 125 125 6 10 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. 5SNE 0800E330100 IGBT characteristic values Parameter Collector (-emitter) breakdown voltage Collector-emitter 4) saturation voltage Collector cut-off current Gate leakage current Gate-emitter threshold voltage Gate charge Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time 3) Symbol V(BR)CES VCE sat ICES IGES VGE(TO) Qge Cies Coes Cres td(on) tr td(off) tf Conditions VGE = 0 V, IC = 10 mA, Tvj = 25 C IC = 800 A, VGE = 15 V VCE = 3300 V, VGE = 0 V Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C min 3300 2.7 3.5 typ max Unit V 3.1 3.8 3.4 4.3 8 80 V V mA mA nA V C VCE = 0 V, VGE = 20 V, Tvj = 125 C IC = 160 mA, VCE = VGE, Tvj = 25 C IC = 800 A, VCE = 1800 V, VGE = -15 V .. 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 C VCC = 1800 V, IC = 800 A, RG = 2.2 , VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 800 A, RG = 2.2 , VGE = 15 V, L = 100 nH, inductive load VCC = 1800 V, IC = 800 A, VGE = 15 V, RG = 2.2 , L = 100 nH, inductive load VCC = 1800 V, IC = 800 A, VGE = 15 V, RG = 2.2 , L = 100 nH, inductive load Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C -500 5.5 8.07 125 7.71 1.48 525 525 190 200 1060 1210 340 460 1000 500 7.5 nF ns ns ns ns Turn-on switching energy Eon mJ 1380 880 mJ 1250 3300 15 A nH m Turn-off switching energy Short circuit current Module stray inductance Resistance, terminal-chip 3) 4) Eoff ISC L CE RCC'+EE' tpsc 10 s, VGE = 15 V, Tvj = 125 C, VCC = 2500 V, VCEM CHIP 3300 V Leg 1 + 2 parallel Leg 1 + 2 parallel TC = 25 C TC = 125 C 0.09 0.13 Characteristic values according to IEC 60747 - 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 2 of 9 5SNE 0800E330100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol VF Irr Qrr trr Erec L AC RAA'+CC' Conditions IF = 800 A Tvj = 25 C Tvj = 125 C Tvj = 25 C VCC = 1800 V, IF = 800 A, VGE = 15 V, RG = 2.2 L = 100 nH inductive load Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Tvj = 25 C Tvj = 125 C Leg 3 Leg 3 TC = 25 C TC = 125 C min 2.0 2.0 typ 2.3 2.35 710 950 500 930 850 1550 620 1180 30 0.18 0.26 max 2.6 2.6 Unit V A C ns mJ nH m Reverse recovery current Recovered charge Reverse recovery time Reverse recovery energy Stray inductance Resistance, terminal-chip 5) 6) Characteristic values according to IEC 60747 - 2 Forward voltage is given at chip level 7) Thermal properties Parameter IGBT thermal resistance junction to case Symbol Rth(j-c)IGBT Rth(j-c)DIODE 2) Conditions min typ max Unit 0.013 K/W 0.025 K/W 0.012 0.024 K/W K/W Diode thermal resistance junction to case IGBT thermal resistance case to heatsink Diode thermal resistance case to heatsink 2) Rth(c-s)IGBT IGBT per switch, grease = 1W/m x K Rth(c-s)DIODE Diode per switch, grease = 1W/m x K 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 7) Mechanical properties Parameter Dimensions Clearance distance in air Surface creepage distance Mass 7) Symbol LW da ds m x x Conditions according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: min x typ x max Unit mm mm mm H Typical , see outline drawing 190 140 38 23 19 33 32 1380 g Thermal and mechanical properties according to IEC 60747 - 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 3 of 9 5SNE 0800E330100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 4 of 9 5SNE 0800E330100 1600 1400 1200 25 C 1000 IC [A] 125 C IC [A] 800 600 400 200 VGE = 15 V 0 0 1 2 3 VCE [V] 4 5 6 1600 VCE = 20 V 1400 1200 1000 800 600 125 C 400 25 C 200 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 VGE [V] Fig. 1 Typical on-state characteristics, chip level Fig. 2 Typical transfer characteristics, chip level 1600 1400 1200 13 V 1000 IC [A] 800 600 400 9V 200 Tvj = 25C 0 0 1 2 VCE [V] 3 4 5 11 V IC [A] 17 V 15 V 1600 1400 1200 1000 800 600 9V 400 200 Tvj = 125 C 0 0 1 2 3 4 5 6 7 VCE [V] 17 V 15 V 13 V 11 V Fig. 3 Typical output characteristics, chip level Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 5 of 9 5SNE 0800E330100 4.0 3.5 3.0 2.5 Eon, E off [J] Eon, E off [J] E off 2.0 1.5 VCC = 1800 V VGE = 15 V R G = 2.2 ohm Tvj = 125 C L = 100 nH E on 7.0 VCC = 1800 V IC = 800 A VGE = 15 V Tvj = 125 C L = 100 nH E on 6.0 5.0 4.0 3.0 2.0 1.0 0.5 E sw [J] = 1.03 x 10 -6 x I C2 + 1.86 x 10 -3 x I C + 419 x 10-3 E off 1.0 0.0 0 400 800 IC [A] 1200 1600 0.0 0 5 10 15 20 25 R G [ohm] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 Typical switching energies per pulse vs gate resistor 10 10 VCC = 1800 V IC = 800 A VGE = 15 V Tvj = 125 C L = 100 nH td(on), tr, td(off), t f [s] t d(off) td(off) tf td(on), tr, td(off), t f [s] 1 td(on) tr 1 t d(on) 0.1 tr VCC = 1800 V RG = 2.2 ohm VGE = 15 V Tvj = 125 C L = 100 nH tf 0.01 0 400 800 IC [A] 1200 1600 0.1 0 5 10 15 20 25 R G [ohm] Fig. 7 Typical switching times vs collector current Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 6 of 9 5SNE 0800E330100 1000 20 VGE = 0V f OSC = 1 MHz VOSC = 50 mV Cies 15 VCC = 1800 V 100 VGE [V] C [nF] VCC = 2500 V 10 Coes 10 Cres 5 IC = 800 A Tvj = 25 C 1 0 5 10 15 20 V CE [V] 25 30 35 0 0 1 2 3 4 Q g [C] 5 6 7 8 Fig. 9 Typical capacitances vs collector-emitter voltage Fig. 10 Typical gate charge characteristics 2.5 VCC 2500 V, Tvj = 125 C VGE = 15 V, RG = 2.2 ohm 2 1.5 ICpulse / IC 1 0.5 Chip Module 0 500 1000 1500 2000 2500 3000 3500 0 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 7 of 9 5SNE 0800E330100 1500 VCC = 1800 V VGE = 15 V R G = 2.2 ohm Tvj = 125 C L = 100 nH E rec Q rr 1200 1250 1000 R G = 2.2 ohm Erec [mJ], I rr [A], Q rr [C] E rec [mJ],I rr [A], Q rr [C] Irr 750 600 R G = 5.6 ohm E rec 400 R G = 15 ohm R G = 8.2 ohm 500 Irr R G = 22 ohm 250 E rec [mJ] = -600 x 10 -6 x I F2 + 1.72 x I F + 190 200 VCC = 1800 V IF = 800 A Tvj = 125 C L = 100 nH 2 di/dt [kA/s] 3 4 0 0 400 800 IF [A] 1200 1600 0 0 1 Fig. 12 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1600 1400 25C 1200 125C 1000 IF [A] 800 600 400 IR [A] 2000 VCC 2500 V di/dt 5000 A/s Tvj = 125 C 1600 1200 800 400 200 0 0 1 2 VF [V] 3 4 0 0 500 1000 1500 2000 2500 VR [V] 3000 3500 Fig. 14 Typical diode forward characteristics, chip level Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1562-01 July 07 page 8 of 9 R G = 3.3 ohm Q rr R G = 2.7 ohm 1000 800 5SNE 0800E330100 0.1 Analytical function for transient thermal impedance: Z th(j-c) Diode Z th(j-c) [K/W] IGBT, DIODE 0.01 Z th(j-c) IGBT Z th (j-c) (t) = R i (1 - e -t/ i ) i =1 2 2.06 30.1 4.28 30.1 i 1 8.78 207.4 17.3 203.6 3 0.961 7.55 1.92 7.53 4 0.948 1.57 1.92 1.57 5 IGBT n Ri(K/kW) i(ms) Ri(K/kW) i(ms) 0.001 0.0001 0.001 0.01 0.1 t [s] 1 10 Fig. 16 Thermal impedance vs time ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors DIODE Doc. No. 5SYA1562-01 July 07 |
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